1 to-220f item symbol ratings unit remarks drain-source voltage v ds 250 v dsx 220 continuous drain current i d 14 pulsed drain current i d(puls] 56 gate-source voltage v gs 30 repetitive or non-repetitive i ar 14 non-repetitive maximum avalanche energy e as 301.1 repetitive maximum avalanche energy 3.7 maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 peak diode recovery -di/dt -di/dt 100 max. power dissipation p d 2.16 37 operating and storage t ch +150 temperature range t stg isolation voltage v iso *6 2 electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3913-01MR fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators dc-dc converters ups (uninterruptible power supply) maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =250v v gs =0v v ds =200v v gs =0v v gs =30v i d =7a v gs =10v i d =7a v ds =25v v cc =48v i d =7a v gs =10v r gs =10 v v a ma na m s pf nc v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 3.378 58.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd v sd t rr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mhz v cc =125v i d =14a v gs =10v i f =14a v gs =0v t ch =25c i f =14a v gs =0v -di/dt=100a/ s t ch =25c v v a a v a mj mj kv/ s kv/ s a/ s w w c c kvrms 250 3.0 5.0 25 2.0 100 220 280 510 780 1170 90 135 69 12 18 3 4.5 23 35 69 22 33 711 69 1.00 1.50 120 250 0.5 1.25 -55 to +150 outline drawings [mm] equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series 200509 = < v gs =-30v note *1 note *2 note *3 vds 250v note *4 note *5 ta=25 c tc=25 c t=60sec, f=60hz = < = < = < note *1 tch 150c note *2 starting tch=25c, i as =6a, l=14.1mh, v cc =48v, r g =50 e as limited by maximum channel temperrature and avalanche current. see to ?avalanche energy? graph. note *3 repetitve rating : pulse width limited by maximum channel temperature. see to ?transient thermal impedance? graph. note *4 i f -i d , -di/dt=100a/ s, vcc bv dss , tch 150c note *5 i f -i d , -di/dt=100a/ s, vcc bv dss , tch 150c = < < = < = < http://www.fujielectric.co.jp/fdt/scd/
2 characteristics 2SK3913-01MR fuji power mosfet 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 2 4 6 8 10121416 0 5 10 15 20 25 30 35 20v 10v 8v 7v 6.5v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c vgs=6v 012345678910 0.01 0.1 1 10 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 0 5 10 15 20 25 30 35 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 rds(on) [ ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 8v 7.5v 7.0v vgs=6.5v -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 rds(on) [ ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=7a,vgs=10v
3 2SK3913-01MR fuji power mosfet -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250ua vgs(th) [v] tch [ c] 0 10203040506070 0 4 8 12 16 20 24 qg [nc] typical gate charge characteristics vgs=f(qg):id=14a,tch=25 c vgs [v] 200v 250v vcc= 50v 10 -1 10 0 10 1 10 2 10 3 1p 10p 100p 1n 10n c [f] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id t=f(id):vcc=48v,vgs=10v,rg=10 td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 i as =5.6a i as =8.4a i as =14a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=48v,i(av)<=14a
4 2SK3913-01MR fuji power mosfet http://www.fujielectric.co.jp/fdt/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=48v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [ c/w] t [sec]
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